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       SMD Schottky Barrier Diode Page 1 QW-G1009 REV:A Features - Low forward Voltage. - Designed for mounting on small surface. - Extremely thin / leadless package. - Majority carrier conduction. Mechanical data - Case: 1005/SOD-323F s tandard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Marking code: cathode band & BG - Mounting position: Any - Weight: 0.006 gram(approx.). CDBF70-HF 0.102(2.60) 0.095(2.40) 0.020(0.50) Typ. 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) 0.012 (0.30) Typ. 0.040(1.00) Typ. 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 Symbol Min Typ Max Unit Parameter Conditions Forward voltage IF = 1 5mA IF = 1 mA VF V 1 0.41 Reverse current IR uA VR = 5 0V Capacitance between terminals Reverse recovery time f = 1 MHz, and 0 VDC reverse voltage IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm CT Trr pF nS 5 2 0.1 5 O C unless otherwise noted) Maximum Rating (at TA=2 n Typ Max Unit IO VR(RMS) VR VRM Average forward rectified current Reverse voltage Peak reverse voltage Symbol Mi Parameter Conditions RMS reverse voltage mA V V V 70 49 70 70 IFSM Forward current,surge peak 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) A 0.1 PD Power dissipation mW 200 O C +125 TSTG Tj Storage temperature Junction temperature O C +125 -65 Comchip Technology CO., LTD. 1005/SOD-323F Io = 7 0 mA VR = 7 0 Volts RoHS Device Halogen Free |